| PART |
Description |
Maker |
| APTDF30H1201G |
FRED 50-1700V
|
Microsemi
|
| APTDF200H100G |
FRED 50-1700V
|
Microsemi
|
| APTDF60H601G |
FRED 50-1700V
|
Microsemi
|
| APTDF100H20G |
FRED 50-1700V
|
Microsemi
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| FFAF10U170S FFAF10U170STU |
10A/1700V Damper Diode
|
Fairchild Semiconductor
|
| SIGC68T170R3 |
IGBTs - HV Chips - SIGC68T170R3, 1700V, 50A
|
Infineon
|
| C3D10170H |
1700V, Z-Rec? Schottky, TO-247-2 package
|
Wolfspeed
|
| BYP100 C67047-A2254-A2 BYP300 C67047-A2250-A2 |
From old datasheet system
FRED DIODE (FAST RECOVERY EPITAXIAL DIODE SOFT RECOVERY CHARACTERISTICS)
FRED-FET Diode
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MIMMG150SR170B |
1700V 150A IGBT Module RoHS Compliant
|
Micross Components
|
| 2MBI550VJ-170-50 |
IGBT MODULE (V series) 1700V / 550A / 2 in one package
|
Fuji Electric
|
| 2MBI650VXA-170E-50 |
IGBT MODULE (V series) 1700V / 650A / 2 in one package
|
Fuji Electric
|
